Semiconductor Tech. - Manufacturing White Papers
Extended 90 nm CMOS Technology With High Manufacturability for High-Performance, Low-Power, RF/Analog Applications
Overview High-density, 90 nm CMOS technology has been suggested for generic, low-voltage, high-performance applications. This paper, describes some strategies for extending the previous technology in order to fabricate the following: A low-standby-power transistor with high drivability for low-power applications, a high-drivability transistor, inductor, and MIM capacitor for RF/analog applications, up to 10 layers of high-reliability, dual damascene Cu/very-low-k (VLK) and Al interconnects. The low-standby-power, 90 nm transistor consumes only 10% of the standby power consumed by 130 nm transistors, and this is achieved with no degradation of circuit speed. Using 90 nm technology, the paper has fabricated up to 10 layers of interconnects and a 1.07 µm 2 SRAM cell without additional process steps such as local interconnects and shared contacts.
| Publisher | Fujitsu | File Format | |
|---|---|---|---|
| Date Published | June 2003 | ||
| Format | White Papers | ||
| Topics | |||
-
Did you find this white paper useful? 1 out of 2 users found this white paper useful
White Paper RSSBeyond the Conventional Transistor
DownloadThis paper focuses on approaches to continuing CMOS scaling by introducing new device structures and new materials. Starting from an analysis of the sources of improvements in device performance, the...
Generating Switched-Capacitor-Filter Clocks
Recent advances in semiconductor-process technology and circuit-design techniques have brought down the prices of switched-capacitor filters (SCFs) by a factor of three. As an example, five-pole Butterworth low-pass filters sell...
Responding to Volatility in the Semiconductor Supply Chain
A recent IDC survey of executives at semiconductor manufacturing organizations revealed that manufacturers are grappling with several similar business challenges. Reducing the costs of manufacturing and improving the effectiveness of...
Quantitative Ultra Shallow Dopant Profile Measurement by Scanning Capacitance Microscope
This paper compares scanning capacitance microscope (SCM) signals of an n-MOS transistor implanted with arsenic ions at an energy as low as 5 keV with a vertical secondary ion mass...
Toaster Technology
In 1997, Cisco engineers recognized that while processor technology doubled every 18 months, Internet growth rates needed processing speeds to quadruple in that time. This archived Webcast examines the innovations...
