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Ultra High-Speed and Ultra Low-Noise InP HEMTs

Tags:
mobile - wireless communications

Overview InP-based High Electron Mobility Transistors (InP HEMTs) exhibit a record current-gain cutoff frequency of beyond 500 GHz and an ultra low noise figure of less than 2 dB even at 100 GHz. Consequently, they are regarded as key devices for next-generation wired/wireless communication systems and precision sensors. This paper describes some fabrication techniques that enhance device uniformity for large-scale integration and provide the frequency response required for high-speed operation. It then describes two sensors that have been developed using InP HEMTs: a 94-GHz-band passive image sensor and an Ultra-WideBand (UWB) radar operating in the quasi-millimeter waveband of 23 to 29 GHz.

Further White Paper Details
Publisher	Fujitsu	File Format	PDF
Date Published	October 2007
Format	White Papers
Topics	Mobile - Wireless Communications

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