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Quantitative Ultra Shallow Dopant Profile Measurement by Scanning Capacitance Microscope

Overview This paper compares scanning capacitance microscope (SCM) signals of an n-MOS transistor implanted with arsenic ions at an energy as low as 5 keV with a vertical secondary ion mass spectroscopy (SIMS) profile of the same device. Then, it describes SCM measurement by the application of a DC voltage sufficient to compensate for the flat band shift caused by the interaction between the probe of a conductive scanning probe microscope (SPM) and a silicon surface.

Further White Paper Details
Publisher	Fujitsu	File Format	PDF, requires Acrobat Rdr 5
Date Published	June 2002	Downloads	138
Format	White Papers
Topics	Semiconductor Tech. - Manufacturing

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